Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology

Abstract

Measuring single-event transient (SET) pulse widths is critical for developing proper mitigation schemes to single-event effects (SEE), especially for advanced technologies. This paper presents a test chip design implementing advanced techniques for measuring SETs implemented in a 28 nm Ultra-Thin Body and Box (UTBB) FDSOI technology. Experimental results of heavy ion and Co-60 irradiation experiments are presented. The heavy ion experiments confirm that this technology has very low SEE sensitivity. Laser test results show that pulse distortion (broadening) plays a key role when evaluating the effect of SETs. Total Ionizing Dose (TID) effects were also evaluated by measuring the Ring Oscillator (RO) frequencies and static current during heavy ion and Co-60 irradiation. Experimental results showed that the RO frequencies degraded up to 10% (heavy ion), and 40% (Co-60) after 1000 krad(Si) irradiation, but the logic in the chip functioned without error.