M. Gros‐Jean

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · Solid-State Electronics · 2009 · 133 citations

Engineering, Computer Engineering, Electrical Engineering +11

<i>In situ</i> electric field simulation in metal/insulator/metal capacitors

Nicolas Gaillard, L. Pinzelli, M. Gros‐Jean et al. · Applied Physics Letters · 2006 · 63 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

P. Caubet, Tom Blomberg, R. Benaboud et al. · Journal of The Electrochemical Society · 2008 · 48 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Method to assess the grain crystallographic orientation with a submicronic spatial resolution using Kelvin probe force microscope

Nicolas Gaillard, M. Gros‐Jean, D. Mariolle et al. · Applied Physics Letters · 2006 · 45 citations

Natural Sciences, Materials Engineering, Materials Science +17