M. Gros‐Jean - Concepedia

Author

M. Gros‐Jean

Also Known As

Gros Jean, M., Gros-Jean, M., Gros-Jean, Mickael, Grosjean, M., M Gros-Jean, M. Gros-Jean, M. Grosjean, M. Gros‐Jean, Mickael GROS-JEAN, Mickael Gros-Jean

Publications

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (France)Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information CEA Grenoble Centre National de la Recherche Scientifique

About

M. Gros‐Jean is an author at STMicroelectronics (France) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	23	875
2	Applied Physics	16	19	776
3	Chemical Engineering	4	4	103
4	Chemistry	3	3	84
5	Medicine	1	1	45

M. Gros‐Jean

Publications

887

Citations

H-Index

Page 1

	Year	Citations
A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives P. Chevalier, G. Avenier, G. Ribes, Low-power ElectronicsElectrical EngineeringMillimeter Wave TechnologyEngineeringVlsi Design	2014	171
FDSOI devices with thin BOX and ground plane integration for 32nm node and below C. Fenouillet-Béranger, S. Denorme, P. Perreau, Solid-State Electronics 3D Ic ArchitectureElectrical EngineeringEngineeringVlsi DesignThin Box	2009	130
<i>In situ</i> electric field simulation in metal/insulator/metal capacitors Nicolas Gaillard, L. Pinzelli, M. Gros‐Jean, Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringInterface TopographySurface Science	2006	62
Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient P. Caubet, Tom Blomberg, R. Benaboud, Journal of The Electrochemical Society Hydrogen Energy TechnologyEngineeringChemistryChemical DepositionChemical Engineering	2008	48
Method to assess the grain crystallographic orientation with a submicronic spatial resolution using Kelvin probe force microscope Nicolas Gaillard, M. Gros‐Jean, D. Mariolle, Applied Physics Letters EngineeringSevere Plastic DeformationMicroscopyKfm TechniqueMechanical Engineering	2006	45
Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology C. Fenouillet-Béranger, P. Perreau, Loan Pham-Nguyen, EngineeringVlsi DesignElectronic DesignIntegrated CircuitsSemiconductor Device	2009	45
FDSOI devices with thin BOX and ground plane integration for 32nm node and below C. Fenouillet-Béranger, S. Denorme, P. Perreau, EngineeringVlsi DesignThin BoxDevice IntegrationFdsoi Devices	2008	39
Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO<inf>2</inf>-RRAM integrated in a 65nm CMOS technology T. Diokh, Elise Le-Roux, S. Jeannot, Electrical EngineeringEngineeringDisturb ImmunityElectronic MemoryEmerging Memory Technology	2013	35
Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors T. Bertaud, S. Blonkowski, C. Bermond, IEEE Electron Device Letters Materials ScienceElectrical EngineeringDielectricsFrequency EffectWideband Frequency Characterizations	2010	31
Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications A. Salaün, H. Grampeix, Julien Buckley, Thin Solid Films Non-volatile MemoryElectrical EngineeringEngineeringEmerging Memory TechnologyApplied Physics	2012	28

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