R.S. Amos

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky et al. · 2003 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors

Sufi Zafar, C. Cabral, R.S. Amos et al. · Applied Physics Letters · 2002 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage

E. P. Gusev, C. Cabral, Y.H. Kim et al. · 2004 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Stress Proximity Technique for Performance Improvement with Dual Stress Liner at 45nm Technology and Beyond

X. Chen, S. Fang, Wenli Gao et al. · 2006 · 25 citations

Engineering, Electrical Engineering, Materials Science +12

Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices

M. Ieong, J. Sudijono, J.-H. Ku et al. · 2006 · 25 citations

Engineering, Electrical Engineering, Materials Science +15