Applied Physics Letters · 2002 · 43 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingElectrical CharacterizationMetal-oxide-semiconductor Field-effect TransistorsMos CapacitorsBarrier HeightsCapacitanceCapacitance MeasurementCapacitance ModelingElectron Work FunctionFixed Charge DensityWork FunctionWork Function Determination
A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors.
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