C.D. Gunderson

The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

J.R. Pfiester, F.K. Baker, T.C. Mele et al. · IEEE Transactions on Electron Devices · 1990 · 211 citations

Engineering, Electrical Engineering, Materials Science +17

The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs

F.K. Baker, J.R. Pfiester, T.C. Mele et al. · 2003 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

A self-aligned elevated source/drain MOSFET

J.R. Pfiester, R.D. Sivan, H.M. Liaw et al. · IEEE Electron Device Letters · 1990 · 46 citations

Engineering, Electrical Engineering, Low-power Design +16

Characterization of polysilicon-encapsulated local oxidation

S. Roth, W. Ray, C. Mazuré et al. · IEEE Transactions on Electron Devices · 1992 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

A quadruple well, quadruple polysilicon BiCMOS process for fast 16 Mb SRAM's

J.D. Hayden, R.C. Taft, P.U. Kenkare et al. · IEEE Transactions on Electron Devices · 1994 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17