IEEE Transactions on Electron Devices · 1992 · 16 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice CharacterizationIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor ReliabilitySilicon MaterialsGate Oxide DegradationGate Oxide LeakageOxidationOxide ReliabilityPolysiliconSiliconSilicon NitrideSilicon Oxidation
Device isolation has been most commonly achieved through the use of local oxidation of silicon (LOCOS) or LOCOS derivatives. LOCOS is a highly dependable, low-defect isolation technique, which explains its continued extensive use. Unfortunately, the inherently large oxide encroachment associated with LOCOS is not compatible with 0.8- mu m design rules. Many alternative isolation techniques designed to reduce oxide encroachment have been proposed. These alternatives often result in an increase in defectivity and/or process complexity. Polysilicon-encapsulated local oxidation (PELOX) utilizes a polysilicon-filled cavity self-aligned to the nitride edge to achieve oxide encroachment reduction. The physical (scanning electron and transmission electron micrographs) and electrical (electrical channel width, diode leakage, and gate oxide integrity) characterization of PELOX isolation are reported.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Sealed-interface local oxidation technology
John Hui, Tzu‐Yin Chiu, Siu-Weng S. Wong et al. · IEEE Transactions on Electron Devices · 1982 · 51 citations
Two-dimensional silicon oxidation experiments and theory
Dah-Bin Kao, J.P. McVittie, William D. Nix et al. · 1985 · 33 citations
Natural Sciences, Materials Engineering, Materials Science +16
Polysilicon encapsulated local oxidation
S. Roth, W. Ray, C. Mazuré et al. · IEEE Electron Device Letters · 1991 · 30 citations
Engineering, Electrical Engineering, Materials Engineering +17