N. Lustig

Full copper wiring in a sub-0.25 μm CMOS ULSI technology

D. Edelstein, J. Heidenreich, R. Goldblatt et al. · 2002 · 352 citations

Engineering, Computer Engineering, Electrical Engineering +17

Gate dielectric and contact effects in hydrogenated amorphous silicon-silicon nitride thin-film transistors

N. Lustig, Jerzy Kanicki · Journal of Applied Physics · 1989 · 130 citations

Engineering, Electrical Engineering, Materials Science +17

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

P. Agnello, T. Ivers, C. Warm et al. · 2006 · 115 citations

Engineering, Computer Engineering, Electrical Engineering +17

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried et al. · 2012 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +17

A high performance 0.13 μm copper BEOL technology with low-k dielectric

R. Goldblatt, B. Agarwala, M.B. Anand et al. · 2002 · 30 citations

Engineering, Materials Engineering, Materials Science +15