Breakdown behaviour of high-voltage GaN-HEMTs

AlGaN/GaN HEMTs-an overview of device operation and applications

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Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

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Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation

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Electron initiated impact ionization in AlGaN alloys

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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

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