Breakdown behaviour of high-voltage GaN-HEMTs - Concepedia

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Breakdown behaviour of high-voltage GaN-HEMTs

62

Citations

14

References

2015

Year

Wataru Saito, Takeshi Suwa, T. Uchihara, Toshiyuki Naka, Teruyuki Kobayashi

Microelectronics Reliability

Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceHigh-voltage Gan-hemts

References

	Year	Citations

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