Advances and challenges in chemical mechanical polishing of silicon carbide: materials, mechanisms, and future directions

Ailin Li, Jiakai Zhou, Xinhuan Niu, Qing Ma, Mengqi Wang, Bin Hu

Journal of Materials Chemistry C · 2025 · 14 citations · 143 references

Concepts

Abstract

Silicon carbide (SiC), a third-generation wide bandgap semiconductor material, demonstrates immense potential in high-temperature, high-frequency, and high-power electronic devices.

References

143