Concepedia

Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness

G. Purnachandra Rao, Trupti Ranjan Lenka, Nour El I. Boukortt, Sharif Md. Sadaf, Hieu Pham Trung Nguyen

Journal of Materials Science Materials in Electronics · 2023 · 18 citations · 30 references

DOI

Concepts

References

30

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

, , +17

AlGaN/GaN HEMTs-an overview of device operation and applications

Umesh K. Mishra, P. Parikh, Yifeng Wu · Proceedings of the IEEE · 2002 · 2.2K citations

, , +17

Recent progress in Ga<sub>2</sub>O<sub>3</sub>power devices

Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami et al. · Semiconductor Science and Technology · 2016 · 1.1K citations

, , +17

High-quality β-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by edge-defined film-fed growth

Akito Kuramata, Kimiyoshi Koshi, Shinya Watanabe et al. · Japanese Journal of Applied Physics · 2016 · 1K citations

, , +17

Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method

Hideo Aida, Nishiguchi Kengo, Hidetoshi Takeda et al. · Japanese Journal of Applied Physics · 2008 · 684 citations

, , +15