Vertical Diamond Trench MOS Barrier Schottky Diodes With High Breakdown Voltage

Abstract

We carried out the first experimental demonstration of vertical diamond trench MOS barrier Schottky (TMBS) diodes. The electrical properties of fabricated diamond TMBS diodes with varied mesa width ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{\text{mesa}}$ </tex-math></inline-formula> ) were investigated by current–voltage and capacitance–voltage (CV) measurements at room temperature. Diamond TMBS diodes exhibit enhanced reverse blocking capability while maintaining good forward conduction characteristics. The breakdown voltage (BV) of TMBS diode with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{\text{mesa}}$ </tex-math></inline-formula> of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2 ~\mu \text{m}$ </tex-math></inline-formula> reaches up to 265 V, which is 54% higher than that of the regular Schottky diode without trench MOS structure. This indicates that diamond TMBS diodes have significant potential for high-power application in the future.