2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 23 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsInterface EngineeringMetal-semiconductor ContactsMetalsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesContact FormationContact ResistanceEtch MechanismsMetal Contact OptimizationMetal-semiconductor InterfacesMetallizationOhmic ContactsResistivity
This work reports metal exploration for buried power rail (BPR) and Via-to-BPR (VBPR) towards the 1 nm node. For tungsten, which is the first choice of BPR metal at the 3 nm node, we optimize W metallization stack to minimize line resistivity, together with ways to reduce W-BPR - W-VBPR contact resistance (R). For scaled BPR CDs at the 2 nm and 1 nm nodes, we introduce molybdenum at the BPR level and benchmark its R and electromigration against W and Ru metallization. Additionally, Mo dry & wet, selective etch processes to enable Mo-BPR recess in fin/STI stack at fin pitch 24 nm, and a Mo wet clean process for VBPR contact formation are also demonstrated.
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C. Auth, A. Aliyarukunju, M. Asoro et al. · 2017 · 369 citations
Engineering, Computer Engineering, Electrical Engineering +17
Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions
H.Y. Yu, C. Ren, Yee‐Chia Yeo et al. · IEEE Electron Device Letters · 2004 · 131 citations