2022 IEEE International Reliability Physics Symposium (IRPS) · 2022 · 21 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice ReliabilityDislocations In SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor ReliabilityWide-bandgap Semiconductor DevicesDislocation PhysicsDislocation-semiconductor Device ReliabilityDislocationsLong-term Device ReliabilityLong-term Implant ReliabilityPin DiodesReliability DegradationSchottky Barrier Diodes
Several designs of 1.2kV-rated 4H-SiC PiN diodes and Junction Barrier Schottky (JBS) diodes have been successfully fabricated with various P+ implantation conditions resulting in different junction profiles. P+ regions were implanted at both room temperature and elevated temperature (600˚C) to monitor the generation of Basal Plane Dislocations (BPDs) and study their impact on device long term reliability. It was found that, when the dose in the deeper portion of the junction (implemented by high energy implantations) is well suppressed, static and long-term reliability performances of room temperature implanted devices can be maintained similar to those of high temperature implanted devices.
4
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
Anant Agarwal, Fatima Husna, Sarah K. Haney et al. · IEEE Electron Device Letters · 2007 · 293 citations
Kumiko Konishi, Ryusei Fujita, Yuki Mori et al. · Semiconductor Science and Technology · 2018 · 23 citations