Concepedia

Dislocation-semiconductor Device Reliability

Dislocation-Semiconductor Device Reliability is a theoretical construct in semiconductor materials science that characterizes the influence of crystal dislocations on the operational stability and lifetime performance of semiconductor devices by establishing quantitative relationships between dislocation density, propagation dynamics, and degradation mechanisms under electrical and thermal stress conditions.

30

Publications

999

Citations

184

Authors

47

Institutions

Publications per year

2017–2026

9

Parents

Publications

30

Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Daehwan Jung, Robert W. Herrick, Justin Norman et al. · Applied Physics Letters · 2018 · 158 citations · Full text

, , +14

Laser diode reliability: crystal defects and degradation modes

J. Jiménez · Comptes Rendus Physique · 2003 · 85 citations

, , +16

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

C. Bayram, Z. Vashaei, Manijeh Razeghi · Applied Physics Letters · 2010 · 76 citations

, , +17

Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities

Jan Ruschel, Johannes Glaab, Norman Susilo et al. · Applied Physics Letters · 2020 · 54 citations

, , +17

Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs

Takashi Ishigaki, Tatsunori Murata, Koyo Kinoshita et al. · 2019 · 49 citations

, , +17

1–5 of 30

Authors

184

  1. DF
    Dirk Fahle

    Aixtron (Germany), Germany

    2 publications · 54 citations

    2

    h-index

  2. YY
    Yoshiyuki Yonezawa

    National Institute of Advanced Industrial Science and Technology, Japan

    2 publications · 30 citations

    2

    h-index

  3. HO
    Hajime Okumura

    National Institute of Advanced Industrial Science and Technology, Japan

    2 publications · 30 citations

    2

    h-index

  4. AA
    Anant Agarwal

    Wolfspeed, Inc. (United States), United States

    2 publications · 47 citations

    2

    h-index

  5. HY
    Hady Yacoub

    Aixtron (Germany), Germany

    2 publications · 54 citations

    2

    h-index

1–5 of 184

Institutions

47

  1. The Ohio State University

    Columbus, United States

    2 h-index

    11 publications

    276 citations

  2. Hitachi (Japan)

    Tokyo, Japan

    2 h-index

    13 publications

    541 citations

  3. Aixtron (Germany)

    Herzogenrath, Germany

    2 h-index

    8 publications

    216 citations

  4. Fujitsu (Japan)

    Kawasaki, Japan

    2 h-index

    7 publications

    125 citations

  5. National Institute of Advanced Industrial Science and Technology

    Tsukuba, Japan

    2 h-index

    10 publications

    152 citations

  6. United States Naval Research Laboratory

    Washington, United States

    2 h-index

    3 publications

    70 citations

  7. Massachusetts Institute of Technology

    Cambridge, United States

    2 h-index

    3 publications

    74 citations

  8. RWTH Aachen University

    Aachen, Germany

    2 h-index

    9 publications

    249 citations

1–8 of 47

Venues

  1. Applied Physics Letters

    6 publications · 351 citations

    6

    h-index

  2. Journal of Electronic Materials

    JEM · 4 publications · 122 citations

    4

    h-index

  3. Materials science forum

    MSF · Book series · 2 publications · 26 citations

    2

    h-index

  4. Comptes Rendus Physique

    1 publications · 85 citations

    1

    h-index

  5. physica status solidi (a)

    1 publications · 35 citations

    1

    h-index

1–5