Z. Vashaei

Structural variation of cubic and hexagonal MgxZn1−xO layers grown on MgO(111)∕c-sapphire

Z. Vashaei, Tsutomu Minegishi, Hiroshi Suzuki et al. · Journal of Applied Physics · 2005 · 112 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

C. Bayram, Z. Vashaei, Manijeh Razeghi · Applied Physics Letters · 2010 · 92 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

C. Bayram, Z. Vashaei, Manijeh Razeghi · Applied Physics Letters · 2010 · 76 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn∕O flux ratios

Agus Setiawan, Z. Vashaei, Meoung Whan Cho et al. · Journal of Applied Physics · 2004 · 72 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

Z. Vashaei, Toshiaki Aikawa, Makoto Ohtsuka et al. · Journal of Crystal Growth · 2008 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +16