Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Masataka Imura, Kiyotaka Nakano, Naoki Fujimoto et al. · Japanese Journal of Applied Physics · 2007 · 101 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of thick AlN layers by hydride vapor-phase epitaxy

Yoshinao Kumagai, T. Yamane, Akinori Koukitu · Journal of Crystal Growth · 2005 · 89 citations

Natural Sciences, Materials Engineering, Materials Science +14

Low-temperature plasma-assisted growth of optically transparent, highly oriented nanocrystalline AlN

Chandru Mirpuri, Sai Xu, Jinlin Long et al. · Journal of Applied Physics · 2007 · 58 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

The Study of Preferred Orientation Growth of Aluminum Nitride Thin Films on Ceramic and Glass Substrates

Hui-Ling Kao, P. J. Shih, Chun-Hsi Lai · Japanese Journal of Applied Physics · 1999 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +15

Microstructural evolution and formation of highly c-axis-oriented aluminum nitride films by reactively magnetron sputtering deposition

Wen-Jen Liu, Shih Jeh Wu, Chih-Min Chen et al. · Journal of Crystal Growth · 2005 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +10