Ryusei Fujita

Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area

Ryusei Fujita, Kazuki Tani, Kumiko Konishi et al. · IEEE Transactions on Electron Devices · 2018 · 25 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs

Kumiko Konishi, Ryusei Fujita, Yuki Mori et al. · Semiconductor Science and Technology · 2018 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET

Kumiko Konishi, Ryusei Fujita, Akio Shima et al. · Materials science forum · 2017 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Advanced X-ray imaging at beamline 07 of the SAGA Light Source

Akio Yoneyama, Satoshi Takeya, Thet Thet Lwin et al. · Journal of Synchrotron Radiation · 2021 · 20 citations · Full text

Engineering, Materials Engineering, Diagnostic Imaging +14

Nucleation sites of expanded stacking faults detected by <i>in operando</i> x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs

Kumiko Konishi, Ryusei Fujita, Keisuke Kobayashi et al. · AIP Advances · 2022 · 17 citations · Full text

Engineering, Electrical Engineering, Materials Science +17