Effects of gate length on GaN HEMT performance at room temperature

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Gaudenzio Meneghesso, G. Verzellesi, Francesca Danesin et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 642 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

P. D. Ye, Bingzheng Yang, K.K. Ng et al. · Applied Physics Letters · 2005 · 498 citations

Engineering, Electrical Engineering, Materials Science +17

Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors

Chang Liu, Eng Fong Chor, L.S. Tan · Applied Physics Letters · 2006 · 212 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

J.W. Chung, J. C. Roberts, E. L. Piner et al. · IEEE Electron Device Letters · 2008 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Letters · 2008 · 152 citations

Engineering, Electrical Engineering, Materials Science +17