Olfa Fathallah

Effects of gate length on GaN HEMT performance at room temperature

S. Saadaoui, Olfa Fathallah, Hassen Maaref · Journal of Physics and Chemistry of Solids · 2021 · 26 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +6

Effects of current transportation and deep traps on leakage current and capacitance hysteresis of AlGaN/GaN HEMT

S. Saadaoui, Olfa Fathallah, Hassen Maaref · Materials Science in Semiconductor Processing · 2020 · 21 citations

Current Transportation, Wide-bandgap Semiconductor, Electrical Engineering +9

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

S. Saadaoui, Mohamed Mongi Ben Salem, Olfa Fathallah et al. · Physica B Condensed Matter · 2012 · 17 citations

Electrical Engineering, Engineering, Deep Traps +7

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

M. Gassoumi, Olfa Fathallah, Christophe Gaquière et al. · Physica B Condensed Matter · 2010 · 17 citations

Wide-bandgap Semiconductor, Electrical Engineering, Deep Levels +9

Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0.2Ga0.8N/GaN heterostructures

S. Saadaoui, Olfa Fathallah, Fethi Albouchi et al. · Journal of Physics and Chemistry of Solids · 2019 · 13 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +11