A Comparison of CF4, CHF3 and C4F8 + Ar/O2 Inductively Coupled Plasmas for Dry Etching Applications

Global model of Ar, O2, Cl2, and Ar/O2 high-density plasma discharges

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Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

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Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

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Plasma etching of Si and SiO2 in SF6–O2 mixtures

Riccardo d’Agostino, Daniel Flamm · Journal of Applied Physics · 1981 · 272 citations

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Properties of c-C4F8 inductively coupled plasmas. II. Plasma chemistry and reaction mechanism for modeling of Ar/c-C4F8/O2 discharges

Alex V. Vasenkov, Xi Li, G. S. Oehrlein et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2004 · 142 citations

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