Kwang‐Ho Kwon - Concepedia

Author

Kwang‐Ho Kwon

Also Known As

Byungwhan Kim, K H Kwon, K. H. Kwon, K.-H. Kwon, K.H. Kwon, Kikyeong Kwon, Kwang-Ho KWON, Kwang-Ho Kwon, Kwang-Ho kwon, Kwang-ho Kwon

252

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Korea University Ivanovo State University of Chemistry and Technology Hanseo University Electronics and Telecommunications Research Institute Sungkyunkwan University

About

Kwang‐Ho Kwon is an author at Korea University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	55	1.4K
2	Applied Physics	19	36	836
3	Chemical Engineering	14	22	558
4	Chemistry	13	20	451
5	Natural Sciences	4	4	121

Kwang‐Ho Kwon

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Effects of O2 plasma treatment on NH3 sensing characteristics of multiwall carbon nanotube/polyaniline composite films Kum-Pyo Yoo, Kwang‐Ho Kwon, Nam‐Ki Min, Sensors and Actuators B Chemical Materials ScienceChemical EngineeringEngineeringCarbon-based MaterialNanomaterials	2009	124
A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications Inwoo Chun, Alexander Efremov, Geun Young Yeom, Thin Solid Films Materials ScienceEngineeringApplied PhysicsC4f8/o2/ar PlasmasDry Etching Applications	2015	93
Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl[sub 2]∕X (X=Ar, He, N[sub 2]) Inductively Coupled Plasmas Alexander Efremov, Nam‐Ki Min, Bok‐Gil Choi, Journal of The Electrochemical Society EngineeringModel-based AnalysisLangmuir ProbesPlasma SciencePlasma Physics	2008	64
High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition Jong-Chan Lee, Jaehyun Moon, Jae‐Eun Pi, Applied Physics Letters EngineeringThin Film Process TechnologyNanoelectronicsIn2o3 Thin FilmsMolecular Beam Epitaxy	2018	64
On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma Mansu Kim, Nam‐Ki Min, Sun Jin Yun, Microelectronic Engineering Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringSurface Science	2007	52
Study on the surface energy characteristics of polydimethylsiloxane (PDMS) films modified by C4F8/O2/Ar plasma treatment Yong Geun Kim, Nomin Lim, Jihun Kim, Applied Surface Science Materials ScienceChemical EngineeringEngineeringPolymer TechnologyPolymer Science	2017	50
A Model-Based Analysis of Plasma Parameters and Composition in HBr/X (X=Ar, He, N[sub 2]) Inductively Coupled Plasmas Kwang‐Ho Kwon, Alexander Efremov, Moonkeun Kim, Journal of The Electrochemical Society Plasma ParametersPlasma ModelEngineeringPhysicsModel-based Analysis	2010	45
Characterization and removal of silicon surface residue resulting from CHF3/C2F6 reactive ion etching Hyung‐Ho Park, Kwang‐Ho Kwon, Jong-Lam Lee, Journal of Applied Physics Materials ScienceChemical EngineeringEngineeringCrystalline DefectsMicrofabrication	1994	38
A comparative study of CF 4 , Cl 2 and HBr + Ar inductively coupled plasmas for dry etching applications Alexander Efremov, Junmyung Lee, Kwang‐Ho Kwon Thin Solid Films Materials ScienceEngineeringCf 4Dry Etching ApplicationsPlasma Confinement	2017	38
On the relationships between plasma chemistry, etching kinetics and etching residues in CF4+C4F8+Ar and CF4+CH2F2+Ar plasmas with various CF4/C4F8 and CF4/CH2F2 mixing ratios Jaemin Lee, Alexander Efremov, Kwang‐Ho Kwon Vacuum Chemical EngineeringEngineeringVarious Cf4/c4f8ChemistryNonthermal Plasma	2017	35

Page 1