IEEE Transactions on Nanotechnology · 2019 · 12 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesCarrier TransportDislocations In SemiconductorsDopingWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDislocation PhysicsDislocation PropagationGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHigh-electron-mobility TransistorsThreading Dislocations
In this article, the segregation of Mg to threading dislocation is demonstrated in a commercial normally-off GaN High Electron Mobility Transistor using atom probe tomography. The diffusion of Mg from a doped p-type GaN gate through the AlGaN buffer to the GaN substrate is demonstrated.
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