Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method

Vertical Power p-n Diodes Based on Bulk GaN

I.C. Kizilyalli, Andrew Edwards, Özgür Aktaş et al. · IEEE Transactions on Electron Devices · 2014 · 335 citations

Semiconductors, Materials Science, Electrical Engineering +13

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song et al. · Applied Physics Letters · 2015 · 190 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

4-kV and 2.8-$\text{m}\Omega $ -cm² Vertical GaN p-n Diodes With Low Leakage Currents

I.C. Kizilyalli, T. Prunty, Özgür Aktaş · IEEE Electron Device Letters · 2015 · 131 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda et al. · IEEE Electron Device Letters · 2011 · 123 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Vertical GaN Power Diodes With a Bilayer Edge Termination

Jeramy Ray Dickerson, Andrew A. Allerman, Benjamin N. Bryant et al. · IEEE Transactions on Electron Devices · 2015 · 116 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +9