Jeramy Ray Dickerson

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

Robert Kaplar, Andrew A. Allerman, Andrew Armstrong et al. · ECS Journal of Solid State Science and Technology · 2016 · 152 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Vertical GaN Power Diodes With a Bilayer Edge Termination

Jeramy Ray Dickerson, Andrew A. Allerman, Benjamin N. Bryant et al. · IEEE Transactions on Electron Devices · 2015 · 118 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Analysis of the dependence of critical electric field on semiconductor bandgap

Oleksiy Slobodyan, Jack Flicker, Jeramy Ray Dickerson et al. · Journal of materials research/Pratt's guide to venture capital sources · 2022 · 77 citations · Full text

Natural Sciences, Materials Science, Physics +15

High voltage and high current density vertical GaN power diodes

Andrew Armstrong, Andrew A. Allerman, A. J. Fischer et al. · Electronics Letters · 2016 · 71 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Luke Yates, Brendan Gunning, Mary H. Crawford et al. · IEEE Transactions on Electron Devices · 2022 · 61 citations · Full text

Engineering, Electrical Engineering, Materials Science +17