AlGaN avalanche Schottky diodes with high Al-content

Abstract

Abstract Al x Ga 1− x N-based avalanche photodiodes with a Schottky-contact grown on AlN bulk substrate with an Al-content of x = 0.68 have been examined with respect to their structural and electro-optical properties. The Schottky diodes suitable for the solar-blind ultraviolet spectral regime show avalanche gain for voltages in excess of 25 V reverse bias in linear gain mode under frontside illumination. For 60 V reverse bias, avalanche multiplication exceeding 10 4 was obtained. The devices were operated well below breakdown; the measured current for frontside illuminated conditions exceeds the dark-condition characteristics by more than two orders of magnitude at this voltage. The Schottky-barrier height <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>B</mml:mi> </mml:mrow> </mml:msub> </mml:math> and the ideality n were extracted to <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>B</mml:mi> </mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:mn>2.06</mml:mn> </mml:math> eV and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> <mml:mo>=</mml:mo> <mml:mn>1.26</mml:mn> </mml:math> at room temperature, respectively. Temperature dependent measurements indicate a temperature insensitive dark current mechanism with an enhanced multiplication process towards lower temperatures.