Winfried Mönch

Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities

Winfried Mönch · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 436 citations

Engineering, Doped Semiconductors, Semiconductor Device +18

Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers

R. F. Schmitsdorf, T.U. Kampen, Winfried Mönch · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 390 citations

Electrical Engineering, Engineering, Nonuniform Schottky Barriers +11

Role of virtual gap states and defects in metal-semiconductor contacts

Winfried Mönch · Physical Review Letters · 1987 · 337 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +14

On the physics of metal-semiconductor interfaces

Winfried Mönch · Reports on Progress in Physics · 1990 · 287 citations

Semiconductors, Electrical Engineering, Metal-semiconductor Interfaces +12

Metal-semiconductor contacts: electronic properties

Winfried Mönch · Surface Science · 1994 · 226 citations

Semiconductors, Materials Science, Engineering +4