IEEE Electron Device Letters · 2018 · 64 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsChannel DopingChannel Doping EffectsGallium Nitride Microwave Integrated CircuitsGate Oxide Thickness EffectsHigh-electron-mobility TransistorsHigh-frequency ElectronicsMicrowave Transistors
Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and 85% (70%) Al in the barrier (channel)were evaluated for RF performance. The dc characteristics include a maximum current of 160 mA/mm with a transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> . f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> of 28.4 GHz and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of 18.5 GHz were determined from smallsignal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.
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$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
Andrew J. Green, Kelson D. Chabak, M. Baldini et al. · IEEE Electron Device Letters · 2017 · 317 citations
Engineering, Electrical Engineering, Electronic Materials +16
An AlN/Al0.85Ga0.15N high electron mobility transistor
Albert G. Baca, Andrew Armstrong, Andrew A. Allerman et al. · Applied Physics Letters · 2016 · 144 citations · Full text