Concepedia

M. Farahmand

MF

13

Publications

1.1K

Citations

12

H-Index

1997

Active since

Affiliations

Georgia Institute of Technology(Current)

University of Minnesota

Delft University of Technology

Mid Sweden University

Georgia Tech Research Institute

M. Farahmand is an author at Georgia Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringPhysicsSemiconductorsQuantum MaterialsCondensed Matter PhysicsDevice ModelingMicroelectronicsMaterial Science

Publications per year

1997–2007

13

Publications

13

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

M. Farahmand, C. Garetto, E. Bellotti et al. · IEEE Transactions on Electron Devices · 2001 · 473 citations

Materials Science, Electron Transport Physics, Electrical Engineering +14

Electron transport characteristics of GaN for high temperature device modeling

John D. Albrecht, R. P. Wang, P. P. Ruden et al. · Journal of Applied Physics · 1998 · 348 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Monte Carlo calculation of electron transport properties of bulk AlN

John D. Albrecht, R. P. Wang, P. P. Ruden et al. · Journal of Applied Physics · 1998 · 46 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +18

Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

Kevin F. Brennan, E. Bellotti, M. Farahmand et al. · Solid-State Electronics · 2000 · 38 citations

Semiconductors, Device Modeling, Electrical Engineering +11

Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates

M. Farahmand, Kevin F. Brennan · IEEE Transactions on Electron Devices · 1999 · 38 citations

Device Modeling, Gan Mesfet, Electrical Engineering +14

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