M. Farahmand - Concepedia

Concepedia

Author

M. Farahmand

Georgia Institute of Technology

Also Known As

M. Farahmand, Maziar Farahmand

26

Publications

1.1K

Citations

12

H-Index

31

Concepts

All Affiliations

Georgia Institute of Technology University of Minnesota Delft University of Technology Mid Sweden University Georgia Tech Research Institute

MF

About

M. Farahmand is an author at Georgia Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	1K
2	Applied Physics	9	9	1K
3	Health Sciences	1	1	12
4	Biomedical Engineering	1	1	25
5	Computer Engineering	1	1	10

M. Farahmand

×

13

Publications

1.1K

Citations

12

H-Index

	Year	Citations
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries M. Farahmand, C. Garetto, E. Bellotti, IEEE Transactions on Electron Devices Materials ScienceElectron Transport PhysicsElectrical EngineeringAluminium NitrideEngineering	2001	473
Electron transport characteristics of GaN for high temperature device modeling John D. Albrecht, R. P. Wang, P. P. Ruden, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesTransport Parameters	1998	348
Monte Carlo calculation of electron transport properties of bulk AlN John D. Albrecht, R. P. Wang, P. P. Ruden, Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideEngineeringSemiconductorsQuantum Materials	1998	46
Materials theory based modeling of wide band gap semiconductors: from basic properties to devices Kevin F. Brennan, E. Bellotti, M. Farahmand, Solid-State Electronics SemiconductorsDevice ModelingElectrical EngineeringSemiconductor TechnologyEngineering	2000	38
Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates M. Farahmand, Kevin F. Brennan IEEE Transactions on Electron Devices Device ModelingGan MesfetElectrical EngineeringWide-bandgap SemiconductorEngineering	1999	38
First microdosimetric measurements with a TEPC based on a GEM M. Farahmand, A.J.J. Bos, Laura De Nardo, Radiation Protection Dosimetry	2004	30
Design of a new tissue-equivalent proportional counter based on a gas electron multiplier M. Farahmand, A.J.J. Bos, J. Huizenga, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment BioelectronicsGas Electron MultiplierBiomedical EngineeringEngineering	2003	25
Gas electron multiplier (GEM) operation with tissue-equivalent gases at various pressures M. Farahmand, A.J.J. Bos, C.W.E. van Eijk Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Tissue-equivalent GasesVarious PressuresGas Electron MultiplierPhysics	2003	24
Monte Carlo simulation of noncubic symmetry semiconducting materials and devices Kevin F. Brennan, E. Bellotti, M. Farahmand, IEEE Transactions on Electron Devices Superconducting MaterialEngineeringNoncubic Symmetry SemiconductorsMaterial SimulationSemiconductor Device	2000	23
Comparison between wurtzite phase and zincblende phase GaN MESFETs using a full band Monte Carlo simulation M. Farahmand, Kevin F. Brennan IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2000	19

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