P. P. Ruden

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

M. Farahmand, C. Garetto, E. Bellotti et al. · IEEE Transactions on Electron Devices · 2001 · 473 citations

Materials Science, Electron Transport Physics, Electrical Engineering +14

Electron transport characteristics of GaN for high temperature device modeling

John D. Albrecht, R. P. Wang, P. P. Ruden et al. · Journal of Applied Physics · 1998 · 348 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

J. Kolník, İsmail H. Oğuzman, Kevin F. Brennan et al. · Journal of Applied Physics · 1995 · 326 citations

Wide-bandgap Semiconductor, Wurtzite Phases, Electrical Engineering +15

Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

İsmail H. Oğuzman, E. Bellotti, Kevin F. Brennan et al. · Journal of Applied Physics · 1997 · 200 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility

Paul V. Pesavento, Kanan P. Puntambekar, C. Daniel Frisbie et al. · Journal of Applied Physics · 2006 · 194 citations

Materials Science, Electrical Engineering, Electronic Devices +13