Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Photonics, Electrical Engineering, Engineering +13

Semiconductor ultraviolet detectors

Manijeh Razeghi, Antoni Rogalski · Journal of Applied Physics · 1996 · 1.4K citations

Ultraviolet Light, Engineering, Photovoltaics +16

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Edward T. Yu, G.J. Sullivan, P.M. Asbeck et al. · Applied Physics Letters · 1997 · 361 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electron Concentration Profiles +8

Electron transport characteristics of GaN for high temperature device modeling

John D. Albrecht, R. P. Wang, P. P. Ruden et al. · Journal of Applied Physics · 1998 · 348 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

J. Kolník, İsmail H. Oğuzman, Kevin F. Brennan et al. · Journal of Applied Physics · 1995 · 326 citations

Wide-bandgap Semiconductor, Wurtzite Phases, Electrical Engineering +15