Radiation robustness of normally-off GaN/HEMT power transistors (COTS)

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Eiichi Mizuta, S. Kuboyama, Hiroshi Abe et al. · IEEE Transactions on Nuclear Science · 2014 · 157 citations · Full text

Engineering, Electrical Engineering, Power Electronics +16

Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

J.L. Titus, C.F. Wheatley · IEEE Transactions on Nuclear Science · 1996 · 146 citations

Engineering, Electrical Engineering, Microelectronics +15

On Heavy Ion Induced Hard-Errors in Dielectric Structures

T. F. Wrobel · IEEE Transactions on Nuclear Science · 1987 · 109 citations

Engineering, Electrical Engineering, Materials Science +17

Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

S. Kuboyama, Chihiro Kamezawa, Naomi Ikeda et al. · IEEE Transactions on Nuclear Science · 2006 · 103 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections

D.L. Oberg, J.L. Wert · IEEE Transactions on Nuclear Science · 1987 · 89 citations

Engineering, Electrical Engineering, Microelectronics +15