Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Materials Science, Materials Engineering, High Density +13

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 410 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +5

Damage-free separation of GaN thin films from sapphire substrates

William S. Wong, T. Sands, N.W. Cheung · Applied Physics Letters · 1998 · 375 citations

Materials Science, Wide-bandgap Semiconductor, Optical Materials +11

Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

William S. Wong, T. Sands, N.W. Cheung et al. · Applied Physics Letters · 1999 · 341 citations

Optical Materials, Engineering, Laser Applications +20

Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Yuichi Oshima, Takeshi Eri, Masatomo Shibata et al. · Japanese Journal of Applied Physics · 2003 · 282 citations

Materials Engineering, Materials Science, Electrical Engineering +14