Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

Tadatomo Suga, Yoshihiro Takahashi, Hideki Takagi et al. · Acta Metallurgica et Materialia · 1992 · 222 citations

Materials Science, Room Temperature, Interface Chemistry +7

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

Yan Zhou, J. Anaya, James W. Pomeroy et al. · ACS Applied Materials & Interfaces · 2017 · 145 citations

Formation and characterization of 4-inch GaN-on-diamond substrates

Daniel Francis, Firooz Faili, D.I. Babic et al. · Diamond and Related Materials · 2009 · 140 citations

Materials Engineering, Materials Science, Diamond-like Carbon +5

Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Pane-Chane Chao, Kenneth K. Chu, Carlton Creamer et al. · IEEE Transactions on Electron Devices · 2015 · 97 citations

Gan-on-diamond Hemts, Wide-bandgap Semiconductor, Electrical Engineering +13

3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

Tingting Liu, Yuechan Kong, Lishu Wu et al. · IEEE Electron Device Letters · 2017 · 94 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8