Concepedia

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, D. Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Materials Science in Semiconductor Processing · 2017 · 16 citations · 33 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsHeterostructure DevicesHeterostructuresNi-al AlloysOhmic ContactsSheet Resistance

References

33

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen, Oliver D. Häberlen, Alex Lidow et al. · IEEE Transactions on Electron Devices · 2017 · 1.6K citations

Engineering, Electrical Engineering, Materials Science +17

Obtaining the specific contact resistance from transmission line model measurements

G.K. Reeves, H.B. Harrison · IEEE Electron Device Letters · 1982 · 1K citations

Engineering, Electrical Engineering, Circuit Theory +16

Models for contacts to planar devices

H.H. Berger · Solid-State Electronics · 1972 · 917 citations

Engineering, Electrical Engineering, Electronic Materials +5

Models for contacts to planar devices

Microelectronics Reliability · 1972 · 818 citations

Engineering, Electrical Engineering, Electronic Materials +5