2017 · 13 citations · 8 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsStochastic ProcessesPoisson ProcessesRelaxation MechanismsCompound Poisson DistributionsCompound Poisson ModelsCompound Poisson ProcessesPoisson DistributionRelaxation PhenomenaRelaxation ProcessesRelaxation Time DistributionThreshold Voltage
NBTI and RTN time-dependent variability is described from a defect-centric perspective. It is shown that NBTI induced threshold voltage shift (ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ) distribution is governed by a compound Exponential-Poisson process. Using the memoryless properties of Poisson statistics, it is shown that not only the stressed but also the relaxed fraction follows the Exponential-Poisson distribution. Moreover, the relaxed fraction is shown to be independent from the final remaining ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> . Using the same statistical model, the separation of RTN induced ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> from NBTI is shown which allows a more accurate estimation of the characteristic distribution parameters. Finally, it is shown that RTN is a wide-sense stationary noise source of which the autocorrelation can be extracted from analysis of NBTI relaxation traces.
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Origin of NBTI variability in deeply scaled pFETs
B. Kaczer, Tibor Grasser, Ph. Roussel et al. · 2010 · 309 citations