Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Engineering +17

Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu et al. · Journal of Applied Physics · 1994 · 289 citations

Engineering, Materials Engineering, Materials Science +17

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W. Lanford, Tsuyoshi Tanaka, Y. Otoki et al. · Electronics Letters · 2005 · 251 citations

Engineering, Electrical Engineering, Materials Science +17

Depth and thermal stability of dry etch damage in GaN Schottky diodes

X. A. Cao, H. Cho, S. J. Pearton et al. · Applied Physics Letters · 1999 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Electron-irradiation-induced deep level in n-type GaN

Z.-Q. Fang, J. W. Hemsky, D. C. Look et al. · Applied Physics Letters · 1998 · 119 citations

Engineering, Materials Engineering, Materials Science +16