IEEE Electron Device Letters · 2016 · 23 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceMemoryMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice ModelingMemory DevicesNanowiresNoise In Electronic DevicesNoise In Semiconductor Devices1/F NoiseCarrier Number FluctuationsFlash MemoryLow-frequency NoiseNanoelectronic Memory DevicesNoise CharacteristicsQuality DegradationScalability
Low-frequency (LF) noise in a vertically stacked nanowire (VS-NW) memory device, which is based on the silicon-oxide-nitride-oxide-silicon (SONOS) configuration is characterized in two different operational modes, an inversion-mode and a junctionless-mode (JM). The LF noise showed 1/f -shape behavior regardless of the operational mode and followed the carrier number fluctuation model. With regard to the device-to-device variation and quality degradation of the LF noise after iterative program/erase operations, the five-story JM SONOS memory showed comparatively high immunity arising from its inherent bulk conduction and no-junction feature. Despite the harsh fabrication condition used to construct five-story VS-NW, even the five-story JM SONOS memory exhibited LF noise characteristics comparable to those of one-story JM SONOS memory. Thus, the five-story JM SONOS memory is attractive due to its high-performance capabilities and good scalability.
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Nanowire transistors without junctions
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Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors
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