Dae-Chul Ahn

Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

Jae Hur, Byung-Hyun Lee, Min‐Ho Kang et al. · IEEE Electron Device Letters · 2016 · 90 citations

Engineering, Electrical Engineering, Materials Science +17

A Vertically Integrated Junctionless Nanowire Transistor

Byung-Hyun Lee, Jae Hur, Min‐Ho Kang et al. · Nano Letters · 2016 · 73 citations

Engineering, Electrical Engineering, Materials Science +17

Vertically Integrated Multiple Nanowire Field Effect Transistor

Byung-Hyun Lee, Min‐Ho Kang, Dae-Chul Ahn et al. · Nano Letters · 2015 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application

Hagyoul Bae, Byung-Hyun Lee, Dong Il Lee et al. · Scientific Reports · 2016 · 43 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs

Tewook Bang, Byung-Hyun Lee, Choong‐Ki Kim et al. · IEEE Electron Device Letters · 2016 · 23 citations

Engineering, Electrical Engineering, Materials Science +17