Tewook Bang

Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

Jae Hur, Byung-Hyun Lee, Min‐Ho Kang et al. · IEEE Electron Device Letters · 2016 · 90 citations

Engineering, Electrical Engineering, Materials Science +17

A Vertically Integrated Junctionless Nanowire Transistor

Byung-Hyun Lee, Jae Hur, Min‐Ho Kang et al. · Nano Letters · 2016 · 73 citations

Engineering, Electrical Engineering, Materials Science +17

Vertically Integrated Multiple Nanowire Field Effect Transistor

Byung-Hyun Lee, Min‐Ho Kang, Dae-Chul Ahn et al. · Nano Letters · 2015 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Jun-Young Park, Dong‐Il Moon, Myeong‐Lok Seol et al. · IEEE Transactions on Electron Devices · 2016 · 35 citations

Engineering, Electrical Engineering, Materials Engineering +17

Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Eungtaek Kim, Choong‐Ki Kim, Myung Keun Lee et al. · Applied Physics Letters · 2016 · 31 citations

Engineering, Electrical Engineering, Materials Engineering +17