2015 · 33 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCharge Carrier TransportSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesCarrier Mobility ModelingCarrier Transport In SemiconductorsCarrier Transport MechanismsCarrier Transport ModelingElectrical Transport PropertiesHole TransportScatteringThickness Dependence
In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and the GOI thickness dependence over a wide range of GOI thickness down to 2 nm are systematically analyzed and understood from the viewpoint of the scattering mechanisms, for the first time.
3