High-voltage (3 kV) UMOSFETs in 4H-SiC

Abstract

Vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) in 4H-SiC having both trench oxide protection and junction termination extension (JTE) are reported for the first time. Devices are fabricated with and without counter-doped channels. Blocking voltages and specific on-resistances are 3360 V and 199 m/spl Omega/-cm/sup 2/ for doped-channel FETs and 3055 V and 121 m/spl Omega/-cm/sup 2/ for FETs without doped channels. These blocking voltages are the highest reported to date for UMOSFETs in SiC.