Emerging silicon-on-nothing (SON) devices technology

Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation

H.‐S. Philip Wong, D.J. Frank, P. M. Solomon · 2002 · 270 citations

Engineering, Electrical Engineering, Electronic Materials +16

Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

M. Jurczak, T. Skotnicki, M. Paoli et al. · IEEE Transactions on Electron Devices · 2000 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

Gate length scaling and threshold voltage control of double-gate MOSFETs

L. Chang, Samuel Tang, Tsu‐Jae King et al. · 2002 · 156 citations

Engineering, Electrical Engineering, Microelectronics +16

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

F. Balestra, M. Benachir, J. Brini et al. · IEEE Transactions on Electron Devices · 1990 · 121 citations

Engineering, Electrical Engineering, Microelectronics +16