Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

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High growth rates (>30μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

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Mechanical properties of epitaxial 3C silicon carbide thin films

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Development of a high-growth rate 3C-SiC on Si CVD process

M. Reyes, Y. Shishkin, S. Harvey et al. · MRS Proceedings · 2006 · 49 citations

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Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara et al. · Materials science forum · 2003 · 20 citations · Full text

Engineering, Materials Engineering, Materials Science +11