Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

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	Year	Citations
3C-SiC hetero-epitaxial growth on undulant Si(001) substrate Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsSemiconductor Device FabricationSilicon On Insulator	2002	129
Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi Materials science forum Materials EngineeringMaterials ScienceEngineeringApplied PhysicsHeteroepitaxial Growth	2002	59
Traps at the SiC/SiO<sub>2</sub>-Interface Gerhard Pensl, Florin Ciobanu, Valeri Afanas’ev, MRS Proceedings Interface StructureSemiconductor Device FabricationApplied PhysicsSemiconductor Device	2000	55
Theoretical Calculation of Stacking Fault Energies in Silicon Carbide Hisaomi Iwata, U. Lindefelt, Sven Öberg, Materials science forum Defect ToleranceTheoretical CalculationEngineeringPhysicsNatural Sciences	2002	33

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