Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

3C-SiC hetero-epitaxial growth on undulant Si(001) substrate

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara · Journal of Crystal Growth · 2002 · 130 citations

Engineering, Materials Engineering, Materials Science +14

Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates

Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi · Materials science forum · 2002 · 59 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Traps at the SiC/SiO₂-Interface

Gerhard Pensl, Florin Ciobanu, Valeri Afanas’ev et al. · MRS Proceedings · 2000 · 56 citations

Engineering, Materials Engineering, Materials Science +10

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide

Hisaomi Iwata, U. Lindefelt, Sven Öberg et al. · Materials science forum · 2002 · 34 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17