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Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
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2002
Year
Defect ToleranceTheoretical CalculationEngineeringPhysicsNatural SciencesApplied PhysicsCondensed Matter PhysicsDensity-functional TheoryLocal-density ApproximationFault EnergiesDefect FormationQuantum ChemistryMicroelectronicsCarbideSilicon Debugging
A first-principles calculation of stacking fault energies in 3C-, 4H-, and 6H-SiC, based on the local-density approximation within the density-functional theory, is reported. All the structurally d ...