IEEE Transactions on Electron Devices · 1998 · 77 citations · 8 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsThreshold ModelingDrain-induced Barrier LoweringMosfet ModelingThreshold VoltageThreshold Voltage ExtractionThreshold Voltage Modeling
We propose a threshold voltage model for surrounding-gate MOSFETs. The model treats the ends and the double-gate regions of the channel as separate devices operating in parallel. The threshold voltage for the full device is obtained as the perimeter-weighted sum of the threshold voltages of the two parts enabling simple analytic threshold models to be used. Short channel effects and drain-induced barrier lowering are also modeled in this manner.
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Modeling of ultrathin double-gate nMOS/SOI transistors
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