Localized vibrations of hydrogen and deuterium in GaAs. A comparison with Ge and Si

Abstract

Abstract A detailed study is made of the localized vibrational stretching modes of hydrogen in GaAs using high‐energy proton implantation and low‐temperature Fourier transform infrared spectroscopy. New mode frequencies are found and confirmed with the help of deuterium implantation. A comparison with proton‐ and deuteron‐implanted germanium shows a different shape of the vibrational bands in comparison to GaAs. The oscillator strengths and effective charges are determined for the vibrational bands observed.