physica status solidi (b) · 1987 · 36 citations · 11 references
EngineeringSemiconductor DeviceSemiconductor NanostructuresSemiconductorsDeuterium ImplantationNew Mode FrequenciesQuantum MaterialsHigh‐energy Proton ImplantationCompound SemiconductorSemiconductor TechnologyElectrical EngineeringPhysicsAtomic PhysicsHydrogenMicrowave SpectroscopyHydrogen TransitionNatural SciencesSpectroscopyApplied Physics
Abstract A detailed study is made of the localized vibrational stretching modes of hydrogen in GaAs using high‐energy proton implantation and low‐temperature Fourier transform infrared spectroscopy. New mode frequencies are found and confirmed with the help of deuterium implantation. A comparison with proton‐ and deuteron‐implanted germanium shows a different shape of the vibrational bands in comparison to GaAs. The oscillator strengths and effective charges are determined for the vibrational bands observed.
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Vibrational Spectra of Hydrogen in Silicon and Germanium
M. Cardona · physica status solidi (b) · 1983 · 531 citations
Isolation of junction devices in GaAs using proton bombardment
A.G. Foyt, W.T. Lindley, C. M. Wolfe et al. · Solid-State Electronics · 1969 · 175 citations