Proton and deuteron implantations in GaAs, GaP and InP

Abstract

Abstract Infrared absorption measurements have been made on GaAs, GaP and InP following multiple energy bombardments by either protons or deuterons. Localized mode frequencies have been determined for both H and D in GaAs and Gap. Estimates of the relative damage have been made from the induced electronic absorption below the band gap energy. Preliminary results of annealing studies are presented. This work relates to recent publications which show that the carrier removal rate in deuteron irradiated GaAs is twenty times greater than that obtained with proton irradiations.