Direct experimental evidence for monosilane formation after proton or deuteron implantation of crystalline silicon

Abstract

We report the first experimental data on monosilane formation after proton or deuteron implantation of crystalline silicon. No mixed silane frequencies nor any changes of the shapes of the observed bands are noticed in the region between 300 and 2300 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ after successive proton and deuteron irradiation. These results imply a random substitution of implanted hydrogen or deuteron atoms in the crystalline lattice.