Reliability of SiC MOS devices

Intrinsic SiC/SiO2 Interface States

V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 643 citations

Natural Sciences, Materials Science, Physics +17

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 434 citations

Engineering, Materials Engineering, Materials Science +17

Band offsets and electronic structure of SiC/SiO2 interfaces

V. V. Afanas’ev, Gerhard Pensl, Max J. Schulz et al. · Journal of Applied Physics · 1996 · 268 citations

Natural Sciences, Materials Science, Physics +17

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

Reinhold Schomer, Peter Friedrichs, Dethard Peters et al. · IEEE Electron Device Letters · 1999 · 227 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

Anant Agarwal, S. R. Seshadri, L.B. Rowland · IEEE Electron Device Letters · 1997 · 193 citations

Engineering, Electrical Engineering, Materials Science +17